MOSFET 40V N/P-Channel Enhancement MOSFET
Products specifications
Number of Channels | 2 Channel |
Rds On - Drain-Source Resistance | 50 mOhms |
Pd - Power Dissipation | 2.1 W |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel, P-Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 40 V |
Configuration | Dual |
Vgs - Gate-Source Voltage | 20 V |
Technology | Si |
Id - Continuous Drain Current | 5.2 A |
Packaging | Cut Tape, MouseReel, Reel |