MOSFETs 60V TRENCH MOSFET 20V VGS P-Channel
Products specifications
Id - Continuous Drain Current | 3.6 A, 2.6 A |
Transistor Polarity | N-Channel, P-Channel |
Rds On - Drain-Source Resistance | 55 mOhms, 125 mOhms |
Pd - Power Dissipation | 1.25 W |
Technology | Si |
Channel Mode | Enhancement |
Configuration | Dual |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Packaging | Reel |
Qg - Gate Charge | 20.4 nC, 12.1 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 2 Channel |