MOSFETs 30V S08 Dual MOSFET 20V VBR 4.5V Gate
Lead Time: 280 Days
Products specifications
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 12.9 nC, 12.7 nC |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Number of Channels | 2 Channel |
Rds On - Drain-Source Resistance | 24 mOhms, 80 mOhms |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V |
Transistor Polarity | N-Channel, P-Channel |
Channel Mode | Enhancement |
Configuration | Dual |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 7.3 A, 5.3 A |
Pd - Power Dissipation | 1.25 W |
Packaging | Cut Tape, MouseReel, Reel |