MOSFETs 20V P-Chnl HDMOS
Lead Time: 56 Days
Products specifications
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Channel Mode | Enhancement |
Technology | Si |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.1 W |
Vgs - Gate-Source Voltage | 4.5 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 200 mOhms |
Vgs th - Gate-Source Threshold Voltage | 700 mV |
Id - Continuous Drain Current | 2.3 A |