MOSFETs 20V N-Chnl HDMOS
Lead Time: 56 Days
Products specifications
Technology | Si |
Pd - Power Dissipation | 806 mW |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 4.5 V |
Rds On - Drain-Source Resistance | 180 mOhms |
Id - Continuous Drain Current | 1.7 A |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 700 mV |
Configuration | Single |
Qg - Gate Charge | 3.4 nC |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Minimum Operating Temperature | - 55 C |