MOSFET Avalanche
Lead Time: 280 Days
Products specifications
Technology | Si |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 700 mW |
Vds - Drain-Source Breakdown Voltage | 60 V |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 600 mA |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 1 Ohms |
Vgs th - Gate-Source Threshold Voltage | 1.3 V |
Packaging | Bulk |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |