MOSFETs N-Chnl 60V
Lead Time: 280 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Id - Continuous Drain Current | 270 mA |
Packaging | Bulk |
Pd - Power Dissipation | 625 mW |
Number of Channels | 1 Channel |
Technology | Si |
Configuration | Single |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 5 Ohms |
Maximum Operating Temperature | + 150 C |