MOSFET N-CH/450V/0.5A/BFET
Products specifications
Transistor Polarity | N-Channel |
Configuration | Single |
Packaging | Ammo Pack |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 450 V |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 50 V |
Technology | Si |
Id - Continuous Drain Current | 500 mA |
Rds On - Drain-Source Resistance | 4.25 Ohms |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 900 mW |