Phototransistors Phototransistor Si Infrared
Lead Time: 140 Days
Products specifications
Rise Time | 15 us |
Collector- Emitter Voltage VCEO Max | 30 V |
Peak Wavelength | 940 nm |
Series | QSB363 |
Pd - Power Dissipation | 75 mW |
Maximum Operating Temperature | + 85 C |
Operating Supply Voltage | 5 V |
Minimum Operating Temperature | - 25 C |
Fall Time | 15 us |
Dark Current | 100 nA |