MOSFETs P-Channel FET Enhancement Mode
Lead Time: 84 Days
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 120 mA |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 360 mW |
Vds - Drain-Source Breakdown Voltage | 60 V |
Transistor Polarity | P-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 10 Ohms |
Channel Mode | Enhancement |
Technology | Si |
Number of Channels | 1 Channel |