JFETs 25V 10mA
Lead Time: 70 Days
Products specifications
Technology | Si |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Transistor Type | JFET |
Product Type | RF JFET Transistors |
Pd - Power Dissipation | 350 mW |
Vgs - Gate-Source Breakdown Voltage | - 25 V |
Id - Continuous Drain Current | 60 mA |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 25 V |
Packaging | Cut Tape, MouseReel, Reel |