MOSFET 60V P-Channel QFET
Lead Time: 350 Days
Products specifications
Number of Channels | 1 Channel |
Pd - Power Dissipation | 47 W |
Mounting Style | Through Hole |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 60 V |
Packaging | Tube |
Tradename | QFET |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 25 V |
Rds On - Drain-Source Resistance | 70 mOhms |
Id - Continuous Drain Current | 17 A |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | P-Channel |
Minimum Operating Temperature | - 55 C |
Technology | Si |