MOSFET 60V N-Channel QFET Logic Level
Lead Time: 0 Days
Products specifications
Mounting Style | Through Hole |
Maximum Operating Temperature | + 175 C |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 24 W |
Configuration | Single |
Packaging | Tube |
Tradename | QFET |
Rds On - Drain-Source Resistance | 88 mOhms |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 10 A |
Transistor Polarity | N-Channel |
Technology | Si |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Minimum Operating Temperature | - 55 C |