MOSFET 100V N-Channel QFET
Lead Time: 0 Days
Products specifications
Technology | Si |
Vgs - Gate-Source Voltage | 25 V |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 100 V |
Packaging | Tube |
Tradename | QFET |
Id - Continuous Drain Current | 33 A |
Pd - Power Dissipation | 127 W |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Rds On - Drain-Source Resistance | 52 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |