IGBT Transistors Ultrafast
Products specifications
Technology | Si |
Series | FGAF40N60UFD |
Mounting Style | Through Hole |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 600 V |
Configuration | Single |
Pd - Power Dissipation | 100 W |
Continuous Collector Current at 25 C | 40 A |
Collector-Emitter Saturation Voltage | 3.1 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |