IGBT Transistors 600 V 80 A 79 W
Products specifications
Mounting Style | Through Hole |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Saturation Voltage | 2.1 V |
Collector- Emitter Voltage VCEO Max | 600 V |
Maximum Gate Emitter Voltage | 20 V |
Packaging | Tube |
Technology | Si |
Pd - Power Dissipation | 79 W |
Series | FGAF40N60SMD |
Continuous Collector Current at 25 C | 80 A |