IGBT Transistors 600 V 40 A 62.5 W
Lead Time: 0 Days
Products specifications
Collector- Emitter Voltage VCEO Max | 600 V |
Mounting Style | Through Hole |
Maximum Gate Emitter Voltage | 20 V |
Collector-Emitter Saturation Voltage | 1.9 V |
Technology | Si |
Continuous Collector Current at 25 C | 40 A |
Minimum Operating Temperature | - 55 C |
Series | FGAF20N60SMD |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 62.5 W |
Packaging | Tube |