IGBT Transistors 650V FS Gen3 Trench IGBT
Products specifications
Mounting Style | Through Hole |
Pd - Power Dissipation | 306 W |
Collector-Emitter Saturation Voltage | 1.8 V |
Series | FGA6065ADF |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 650 V |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Continuous Collector Current at 25 C | 120 A |
Maximum Operating Temperature | + 175 C |
Technology | Si |