IGBT Transistors FS3TIGBT TO3PN 50A 650V
Products specifications
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Packaging | Tube |
Maximum Operating Temperature | + 175 C |
Maximum Gate Emitter Voltage | 30 V |
Pd - Power Dissipation | 319 W |
Continuous Collector Current at 25 C | 100 A |
Series | FGA50T65SHD |
Collector-Emitter Saturation Voltage | 2.14 V |
Technology | Si |
Collector- Emitter Voltage VCEO Max | 650 V |