IGBTs 1100 V, 50 A Shorted-anode IGBT
Lead Time: 0 Days
Products specifications
Pd - Power Dissipation | 300 W |
Packaging | Tube |
Series | FGA50S110P |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Gate Emitter Voltage | 25 V |
Continuous Collector Current at 25 C | 50 A |
Maximum Operating Temperature | + 175 C |
Collector- Emitter Voltage VCEO Max | 1100 V |
Collector-Emitter Saturation Voltage | 2.7 V |
Mounting Style | Through Hole |