IGBT Transistors 600V 4 0A UFD
Products specifications
Configuration | Single |
Mounting Style | Through Hole |
Pd - Power Dissipation | 156 W |
Collector- Emitter Voltage VCEO Max | 1000 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Saturation Voltage | 2.5 V |
Series | FGA50N100BNTD |
Packaging | Tube |
Technology | Si |