IGBT Transistors N-ch / 50A 1000V
Products specifications
Collector-Emitter Saturation Voltage | 1.5 V |
Mounting Style | Through Hole |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1000 V |
Packaging | Tube |
Continuous Collector Current at 25 C | 50 A |
Maximum Gate Emitter Voltage | 25 V |
Technology | Si |
Pd - Power Dissipation | 156 W |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Series | FGA50N100BNTD2 |