MOSFET N-Chan Enhancement Mode Field Effect
Lead Time: 154 Days
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 20 V |
Rds On - Drain-Source Resistance | 7.5 Ohms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 200 mW |
Id - Continuous Drain Current | 115 mA |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |