MOSFETs N-Chan Enhancement Mode Field Effect
Lead Time: 175 Days
Products specifications
Pd - Power Dissipation | 250 mW |
Rds On - Drain-Source Resistance | 7.5 Ohms |
Id - Continuous Drain Current | 280 mA |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Technology | Si |
Configuration | Dual |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 2 Channel |
Vgs - Gate-Source Voltage | 20 V |