MOSFETs N-Chan Enhancement Mode Field Effect
Lead Time: 168 Days
Products specifications
Technology | Si |
Configuration | Dual |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 200 mW |
Rds On - Drain-Source Resistance | 7.5 Ohms |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 115 mA |
Maximum Operating Temperature | + 150 C |