MOSFET N-Ch 70V 5A OmniFET
Products specifications
Technology | Si |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 200 mOhms |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Packaging | Tube |
Qg - Gate Charge | 18 nC |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Id - Continuous Drain Current | 5 A |
Pd - Power Dissipation | 31 W |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |