STY50N105DK5

R 1.00

MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 package

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MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 package

Products specifications

Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	1.05 kV
Number of Channels	1 Channel
Id - Continuous Drain Current	44 A
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	175 nC
Tradename	MDmesh
Pd - Power Dissipation	625 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	100 mOhms
Configuration	Single
Vgs - Gate-Source Voltage	30 V
Technology	Si
Packaging	Tube

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Products specifications

Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	1.05 kV
Number of Channels	1 Channel
Id - Continuous Drain Current	44 A
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	175 nC
Tradename	MDmesh
Pd - Power Dissipation	625 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	100 mOhms
Configuration	Single
Vgs - Gate-Source Voltage	30 V
Technology	Si
Packaging	Tube