MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
Products specifications
Rds On - Drain-Source Resistance | 15 mOhms |
Vds - Drain-Source Breakdown Voltage | 650 V |
Mounting Style | Through Hole |
Pd - Power Dissipation | 625 W |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 25 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Id - Continuous Drain Current | 138 A |
Qg - Gate Charge | 414 nC |
Packaging | Tube |
Tradename | MDmesh |
Maximum Operating Temperature | + 150 C |