MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A
Products specifications
Rds On - Drain-Source Resistance | 17 mOhms |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Id - Continuous Drain Current | 130 A |
Channel Mode | Enhancement |
Pd - Power Dissipation | 625 W |
Configuration | Single |
Number of Channels | 1 Channel |
Packaging | Tube |
Transistor Polarity | N-Channel |
Tradename | MDmesh |
Technology | Si |
Mounting Style | Through Hole |
Qg - Gate Charge | 363 nC |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |