MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Qg - Gate Charge | 350 nC |
Tradename | MDmesh |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Pd - Power Dissipation | 625 W |
Rds On - Drain-Source Resistance | 19 mOhms |
Configuration | Single |
Id - Continuous Drain Current | 96 A |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Vgs - Gate-Source Voltage | 25 V |