MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET
Products specifications
Rds On - Drain-Source Resistance | 22 mOhms |
Vgs - Gate-Source Voltage | 25 V |
Packaging | Tube |
Tradename | MDmesh |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 88 A |
Technology | Si |
Pd - Power Dissipation | 625 W |
Configuration | Single |