MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET
Products specifications
Technology | Si |
Mounting Style | Through Hole |
Tradename | MDmesh |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 29 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Id - Continuous Drain Current | 74 A |
Vgs - Gate-Source Voltage | 25 V |
Packaging | Tube |
Pd - Power Dissipation | 625 W |
Configuration | Single |