Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 446 W |
Technology | Si |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 120 nC |
Id - Continuous Drain Current | 66 A |
Vgs - Gate-Source Voltage | 25 V |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 37 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |