Qg - Gate Charge | 120 nC |
Mounting Style | Through Hole |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 0.05 Ohms |
Pd - Power Dissipation | 446 W |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Channel Mode | Enhancement |