STWA48N60DM2

R 1.00

MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

Products specifications

Technology	Si
Pd - Power Dissipation	300 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Configuration	Single
Id - Continuous Drain Current	40 A
Mounting Style	Through Hole
Qg - Gate Charge	70 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	65 mOhms
Tradename	MDmesh

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Products specifications

Technology	Si
Pd - Power Dissipation	300 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Configuration	Single
Id - Continuous Drain Current	40 A
Mounting Style	Through Hole
Qg - Gate Charge	70 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	65 mOhms
Tradename	MDmesh