MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM)
Products specifications
Configuration | Single |
Tradename | MDmesh |
Vds - Drain-Source Breakdown Voltage | 650 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 210 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vgs - Gate-Source Voltage | 25 V |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Packaging | Tube |
Id - Continuous Drain Current | 35 A |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 67 mOhms |
Qg - Gate Charge | 82 nC |