STW8N120K5

R 1.00

MOSFET N-channel 1200 V, 0.62 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-3PF package

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MOSFET N-channel 1200 V, 0.62 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-3PF package

Products specifications

Vds - Drain-Source Breakdown Voltage	1.2 kV
Rds On - Drain-Source Resistance	2 Ohms
Configuration	Single
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	6 A
Packaging	Tube
Pd - Power Dissipation	130 W
Technology	Si
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	13.7 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole

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Products specifications

Vds - Drain-Source Breakdown Voltage	1.2 kV
Rds On - Drain-Source Resistance	2 Ohms
Configuration	Single
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	6 A
Packaging	Tube
Pd - Power Dissipation	130 W
Technology	Si
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	13.7 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole