STW7N90K5

R 1.00

MOSFET N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

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MOSFET N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

Products specifications

Channel Mode	Enhancement
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	17.7 nC
Vds - Drain-Source Breakdown Voltage	900 V
Number of Channels	1 Channel
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	720 mOhms
Configuration	Single
Id - Continuous Drain Current	7 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Pd - Power Dissipation	110 W

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Products specifications

Channel Mode	Enhancement
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	17.7 nC
Vds - Drain-Source Breakdown Voltage	900 V
Number of Channels	1 Channel
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	720 mOhms
Configuration	Single
Id - Continuous Drain Current	7 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Pd - Power Dissipation	110 W