STW7N105K5

R 1.00

MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-247 package

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MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-247 package

Products specifications

Mounting Style	Through Hole
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	4 A
Vgs - Gate-Source Voltage	30 V
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	2 Ohms
Qg - Gate Charge	17 nC
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	1.05 kV
Maximum Operating Temperature	+ 150 C
Tradename	SuperMESH
Pd - Power Dissipation	110 W
Packaging	Tube

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Products specifications

Mounting Style	Through Hole
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	4 A
Vgs - Gate-Source Voltage	30 V
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	2 Ohms
Qg - Gate Charge	17 nC
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	1.05 kV
Maximum Operating Temperature	+ 150 C
Tradename	SuperMESH
Pd - Power Dissipation	110 W
Packaging	Tube