MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs - Gate-Source Voltage | 25 V |
Tradename | MDmesh |
Configuration | Single |
Pd - Power Dissipation | 450 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Id - Continuous Drain Current | 69 A |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 24 mOhms |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 203 nC |
Technology | Si |
Packaging | Tube |