STW75N60M6-4

R 1.00

MOSFET N-channel 600 V, 32 mO typ., 72 A MDmesh M6 Power MOSFET in TO247-4 package

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MOSFET N-channel 600 V, 32 mO typ., 72 A MDmesh M6 Power MOSFET in TO247-4 package

Products specifications

Vgs th - Gate-Source Threshold Voltage	3.25 V
Qg - Gate Charge	106 nC
Mounting Style	Through Hole
Id - Continuous Drain Current	72 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	36 mOhms
Vgs - Gate-Source Voltage	10 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	446 W
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3.25 V
Qg - Gate Charge	106 nC
Mounting Style	Through Hole
Id - Continuous Drain Current	72 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	36 mOhms
Vgs - Gate-Source Voltage	10 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	446 W
Configuration	Single
Channel Mode	Enhancement