STW70N60M2-4

R 1.00

MOSFET N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 package

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MOSFET N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 package

Products specifications

Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Pd - Power Dissipation	450 W
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	30 mOhms
Id - Continuous Drain Current	68 A
Number of Channels	1 Channel
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	118 nC

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Products specifications

Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Pd - Power Dissipation	450 W
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	30 mOhms
Id - Continuous Drain Current	68 A
Number of Channels	1 Channel
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	118 nC