STW70N60DM2

R 1.00

MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package

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MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package

Products specifications

Technology	Si
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	42 mOhms
Tradename	MDmesh
Qg - Gate Charge	121 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Pd - Power Dissipation	446 W
Mounting Style	Through Hole
Id - Continuous Drain Current	66 A
Vgs - Gate-Source Voltage	25 V

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Products specifications

Technology	Si
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	42 mOhms
Tradename	MDmesh
Qg - Gate Charge	121 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Pd - Power Dissipation	446 W
Mounting Style	Through Hole
Id - Continuous Drain Current	66 A
Vgs - Gate-Source Voltage	25 V