STW6N90K5

R 1.00

MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package

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MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Id - Continuous Drain Current	6 A
Vds - Drain-Source Breakdown Voltage	900 V
Technology	Si
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Pd - Power Dissipation	110 W
Configuration	Single
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Rds On - Drain-Source Resistance	910 mOhms
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	11 nC

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Id - Continuous Drain Current	6 A
Vds - Drain-Source Breakdown Voltage	900 V
Technology	Si
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Pd - Power Dissipation	110 W
Configuration	Single
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Rds On - Drain-Source Resistance	910 mOhms
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	11 nC