MOSFET N-CH 650V 0.037Ohm 58A
Products specifications
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 330 W |
Tradename | MDmesh |
Number of Channels | 1 Channel |
Qg - Gate Charge | 143 nC |
Vds - Drain-Source Breakdown Voltage | 710 V |
Rds On - Drain-Source Resistance | 37 mOhms |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 58 A |
Vgs - Gate-Source Voltage | 25 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Tube |