STW65N65DM2AG

R 1.00

MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	60 A
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Qualification	AEC-Q101
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	650 V
Packaging	Tube
Pd - Power Dissipation	446 W
Rds On - Drain-Source Resistance	50 mOhms
Qg - Gate Charge	27 nC

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Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	60 A
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Qualification	AEC-Q101
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	650 V
Packaging	Tube
Pd - Power Dissipation	446 W
Rds On - Drain-Source Resistance	50 mOhms
Qg - Gate Charge	27 nC