STW65N60DM6

R 1.00

MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package

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MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package

Products specifications

Technology	Si
Mounting Style	Through Hole
Channel Mode	Enhancement
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	61 nC
Id - Continuous Drain Current	38 A
Configuration	Single
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	71 mOhms
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Mounting Style	Through Hole
Channel Mode	Enhancement
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	61 nC
Id - Continuous Drain Current	38 A
Configuration	Single
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	71 mOhms
Transistor Polarity	N-Channel