MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET
Products specifications
Technology | Si |
Pd - Power Dissipation | 446 W |
Tradename | MDmesh |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 500 V |
Rds On - Drain-Source Resistance | 43 mOhms |
Packaging | Tube |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vgs - Gate-Source Voltage | 25 V |
Id - Continuous Drain Current | 43 A |
Qg - Gate Charge | 178 nC |