STW58N65DM2AG

R 1.00

MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	65 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	360 W
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	88 nC
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	48 A
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Tradename	MDmesh
Configuration	Single
Vgs - Gate-Source Voltage	25 V

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Products specifications

Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	65 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	360 W
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	88 nC
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	48 A
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Tradename	MDmesh
Configuration	Single
Vgs - Gate-Source Voltage	25 V