STW58N60DM2AG

R 1.00

MOSFET Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Qg - Gate Charge	18 nC
Tradename	MDmesh
Qualification	AEC-Q101
Id - Continuous Drain Current	50 A
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Technology	Si
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	360 W
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement

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Products specifications

Qg - Gate Charge	18 nC
Tradename	MDmesh
Qualification	AEC-Q101
Id - Continuous Drain Current	50 A
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Technology	Si
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	360 W
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement